Optical properties of silicon rich silicon oxides obtained by PECVD
نویسندگان
چکیده
In this work optical properties of SiOX ð0 , X , 2Þ layers obtained by plasma enhanced chemical vapor deposition are studied. Infrared spectra and refractive index dependences with the reactant gases flow ratio R are explained for as deposited, aged and thermally treated samples in the R range from 9.17 to 110. Variations are found to be influenced mainly by sample stoichiometry, density and Si–OH bonds concentration. q 2004 Elsevier Ltd. All rights reserved.
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ورودعنوان ژورنال:
- Microelectronics Journal
دوره 35 شماره
صفحات -
تاریخ انتشار 2004